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FC150LC-0101JY




Chip Structure

  • Base Layer : P-SiO
  • Metal Layer : TiN / AI-Si
  • Passivation Layer : P-SiO / P-SiN (option) Polymide

 

 

Specifications  
Wafer size φ300mm
Wafer Thickness 775±25um
Chip size 25mm * 25 mm (Scribe center to center)
Pad (bump)pitch 150μm
Function Daisy Chain
Electrode Cu pillar (Cu30μm+SnAg15μm)
Bump size φ75μm
Passivation opening 40μm (octagon)
Polyimide opening φ40μm
Scribe line width 100μm
Number of pad 25,921 pads (161×161 Matrix)





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