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FC200SCJY




Chip Structure

  • Base Layer : P-TEOS*
  • Metal Layer : TiN / AI-0.5%Cu
  • Passivation Layer : HDP* / P-SiN (option) Polymide

*TEOS : Tetraethoxysilane
*HDP : High Density Plasma

 

 

Specifications Si  
TYPE A B
Wafer Size 8 inch 8 inch
Wafer Thickness 725±25μm 725±25μm
Chip Size 5.02mm ♦ 5.02mm ♦
Bump pitch 200μm 200μm
Function Daisy Chain Daisy Chain
Pad config Area Area
Electrode Ball Mounted Solder Bump Cu Pillar
Pad Size 100μm ♦ 100μm ♦
Passivation opening φ60μm • φ60μm •
Polyimide opening φ80μm • φ80μm •
UBM Size φ100μm • φ90μm •
Bump Size φ100μm • φ90μm •
Scribe width 100μm 100μm
Number of Pad 484 pads/chip (22×22) 484 pads/chip (22×22)
Number of Chip 832 chips/wafer 832 chips/wafer
    • Top Side ♦ Bottom Side





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