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Practical Components Test Wafer MB130-STG0101JY




Chip Structure

  • MB130
    • Base Layer : P-TEOS*
    • Metal Layer : TiW/ AI-1.0%Si-0.5%Cu
    • Passivation Layer : P-TEOS* / P-SiN (option) Polyimide
  • MB130A
    • Base Layer : P-TEOS*
    • Metal Layer : Ti / TiN / AI-1.0%Si-0.5%Cu
    • Passivation Layer : P-TEOS* / P-SiN (option) Polyimide

*TEOS : Tetraethoxysilane

 

 

Specifications MB130 (Type-A) MB130 (TYPE-B) MB130B
Wafer Size 8 inch 8 inch 8 inch
Wafer Thickness 725±25μm 725±25μm 725±25μm
Chip Size 2.13mm ♦ 2.13mm ♦ 2.13mm ♦
Pad pitch 130μm 130μm 130μm
Metal Thickness Al-Si-Cu
1μm or 2μm or 3μm
Al-Si-Cu
1μm or 2μm or 3μm
Al-Cu
3μm
Function Daisy Chain Daisy Chain Daisy Chain
Pad config Peripheral Peripheral Peripheral
Electrode Wire Bonding
Au Stud Bump
Cu Bump Wire Bonding
Au Stud Bump
Pad Size 100μm ♦ 100μm ♦ 100μm ♦
Passivation opening 80μm ♦ 80μm ♦ 80μm ♦
Polyimide opening 90μm ♦ 90μm ♦ 90μm ♦
Bump Size - 70μm ♦ -
Scribe width 60μm 60μm 60μm
Number of Pad 108 pads/chip
15pads×4 (Outer line)
12pads×4 (Inner line)
108 pads/chip
15pads×4 (Outer line)
12pads×4 (Inner line)
108 pads/chip
15pads×4 (Outer line)
12pads×4 (Inner line)
Number of Chip 6060 chips/wafer 6060 chips/wafer 6060 chips/wafer
      ♦ Bottom Side