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MB50-0101JY




Practical Components MB50-0101JY advanced test wafer, 7.3mm chip size, Pad Pitch 50μm.

 

Chip Structure

  • Base Layer : P-TEOS*
  • Metal Layer : TiN / AI-0.5%Cu
  • Passivation Layer : HDP* / P-SiN (option) Polymide

*TEOS : Tetraethoxysilane
*HDP : High Density Plasma

 

Specifications TYPE-A TYPE-B TYPE-C(Glass)
Wafer Size 8 inch 8 inch 8 inch(Glass wafer)
Wafer Thickness 725±25μm 725±25μm 700±70μm
Chip Size 7.3mm ♦ 7.3mm ♦ 7.3mm ♦
Pad Pitch 50μm 50μm 50μ
Function Daisy Chain Daisy Chain x
Pad config Peripheral Peripheral Peripheral
Electrode Au-Stud Bump
Wire Bonding
Cu-Pillar
Au-Plated
Solder Plated
Ni on Cu-Pillar
Cu-Pillar
Pad Size 48μm ♦ 48μm ♦ x
Bump Size x Cu, Au:30μm ♦ Cu:30μm ♦
Cu:φ25μm • Cu:φ25μm •
Bump Height x any any
Passivation Opening 40μm ♦ φ15μm • x
Scribe Width 120μm 120μm x
Number of Pad 544 pads/chip 544 pads/chip x
Number of Chip 478 chips/wafer 478 chips/wafer 478 chips/wafer
      • Top Side ♦ Bottom Side





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