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MB6020-0101JY




Chip Structure

  • Base Layer : P-TEOS*
  • Metal Layer : TiN / AI-0.5%Cu
  • Passivation Layer : HDP* / P-SiN

*TEOS : Tetraethoxysilane
*HDP : High Density Plasma

 

 

Specifications  
Wafer Size 8 inch
Wafer Thickness 725±25μm
Chip Size 7.3mm ♦
Pad Pitch 60μm
Function Daisy Chain
Bump Size -
Bump Height -
Number of Pad 488 pads/chip
Number of Chip 478 chips/wafer
Polyimide (Option) O
Evaluation KIT -
  ♦ Bottom Side





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