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*HDP : High Density Plasma
Specifications | |
Wafer Size | 8 inch |
Wafer Thickness | 725±25μm |
Chip Size | 7.3mm ♦ |
Pad pitch | 80μm staggered (Peripheral) 300μm Full area (Center core) |
Function | Daisy Chain |
Pad config | Peripheral |
Electrode | Au-stud Bump Wire Bonding Au Plating Cu pillar |
Pad Size | 58μm ♦ |
Passivation opening | 48μm ♦ |
Scribe width | 120μm |
Number of Chip | 478 chips/wafer |
♦ Bottom Side |
Model | Bump Size | Number of Bumps |
Model I | ο 38μmor Φ42μm | 1048 *Peripheral (648) / Full Area (400) |
Model II | ο 38μm | 904 *Peripheral (648) / Full Area (256) |
Model III | ο 38μm | 728 *Peripheral (648) / Full Area (80) |
Model IV | ο 38μm | 648 *Peripheral (648) / Full Area (0) |
*Model IV Compatible to WALTS-TEG MB80-STG0101JY |